R&D Internship in SiC Power Devices 80 - 100% (f/m/d)
About the role
Location:
Lenzburg, Aargau, Switzerland
Job ID:
R0100713
Date Posted:
2025-07-21
Company Name:
HITACHI ENERGY LTD
Profession (Job Category):
Other
Job Schedule:
Full time
Remote:
No
Job Description:
The opportunity
Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You’ll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting.
How you’ll make an impact
- Assist in the conceptual design and TCAD simulation of SiC power devices
- Work with our experienced engineers to refine device structures and optimize performance
- Predict electrical characteristics and validate simulation results
- Analyze data, document findings, and present insights in team meetings
- Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements
Your background
- Master’s degree in Electrical Engineering, Physics, or Materials Science
- Experience with TCAD tools, ideally in SiC device simulation
- Understanding of SiC device physics
- Basic knowledge of semiconductor fabrication processes
- Strong analytical and data interpretation skills
- Fluent in English with excellent communication skills
More about us
We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally – empowering you to thrive while balancing life and work.